摘要: Silicon carbide (SiC) recently emerged as a promising photonic and quantum
material owing to its unique material properties. Here, we carry out an
exploratory investigation of the electro-optic effect in high-quality-factor
4H-SiC microresonators. Our findings confirm the existence of the Pockels
effect in 4H-SiC for the first time. The extracted Pockels coefficients show
certain variations among 4H-SiC wafers from different manufacturers, with the
magnitudes of $r_{13}$ and $r_{33}$ estimated to be in the range of (0.3-0.7)
pm/V and (0-0.03) pm/V, respectively.
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