1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator

автор Zhili Zhang ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Guohao Yu ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Xiaodong Zhang ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Shuxin Tan ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Dongdong Wu ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Kai Fu ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Wei Huang ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Yong Cai ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)} Baoshun Zhang ^{Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)}
Место работы автора

1. Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences (CAS)
Время подачи:2016-12-22 09:46:42

Краткое изложение: An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates was obtained with 18 nm Si3N4 grown by low pressure chemical vapor deposition (LPCVD) as gate insulator, The MIS-HEMTs show high Idss of 16.8 A@Vg=3 V, high breakdown voltage of 600 V and a low specific on-resistance of 2.3. The power device figure of merit V2BV/Ron=157MW·cm-2. Furthermore, the good insulation effects of LPCVD-Si3N4 were also demonstrated by the low gate leakage current of below Ig=154 nA@Vds=600 V and Vgs=-14 V. The high Idss, low specific on-resistance and high breakdown voltage show the potential and advantages of GaN MIS-HEMTs for power switching applications.

CURRENT COLLAPSE POWER-HEMT TRANSISTORS DESIGN

из 王亦
Категоризация： 材料科学 >> 纳米科学和纳米技术
Цитировать： ChinaXiv:201612.00074 (или эта версия ChinaXiv:201612.00074V1)
DOI:J. Appl.Phys. 108, 014508 (2010)，doi: 10.1063/1.3428442
CSTR:32003.36.ChinaXiv.201612.00074.V1
科创链TXID： f0e799de-5284-4a6f-8326-2eb53765474c
Рекомендуемое цитирование： Zhili Zhang,Guohao Yu,Xiaodong Zhang,Shuxin Tan,Dongdong Wu,Kai Fu,Wei Huang,Yong Cai,Baoshun Zhang.1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator.null.[DOI:J. Appl.Phys. 108, 014508 (2010)，doi: 10.1063/1.3428442 ] (Нажмите здесь, чтобы скопировать)

История версий

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2016-12-22 09:46:42

ChinaXiv:201612.00074V1

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