Pressure-Induced Indirect-Direct Bandgap Crossover and Bandgap Engineering in Ductile Semiconductor Ag3PO4 with Negative Linear Compressibility

автор Lu, Yang ¹ Zhu, Shengcai ¹ Huang, Eugene ¹ He, Yu ¹ Ruan, Jiaji ¹ Yan, Hao ¹
Место работы автора

1. Center for High Pressure Science & Technology Advanced Research
Время подачи:2018-09-03 00:41:25

Краткое изложение: " " " "

Negative compressibility Bandgap engineering Silver orthophosphate

из Yang Lu
Категоризация： 材料科学 >> 材料科学（综合）
Цитировать： ChinaXiv:201809.00002 (или эта версия ChinaXiv:201809.00002V1)
DOI:10.12074/201809.00002V1
CSTR:32003.36.ChinaXiv.201809.00002.V1
科创链TXID： c1b13b64-5227-4e4a-9899-2f385c5b9049
Рекомендуемое цитирование： Lu, Yang,Zhu, Shengcai,Huang, Eugene,He, Yu,Ruan, Jiaji,Yan, Hao.Pressure-Induced Indirect-Direct Bandgap Crossover and Bandgap Engineering in Ductile Semiconductor Ag3PO4 with Negative Linear Compressibility.null.[ChinaXiv:201809.00002V1] (Нажмите здесь, чтобы скопировать)

[V1]

2018-09-03 00:41:25

ChinaXiv:201809.00002V1

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