Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates 后印本

автор Wu, GD ^{Wu, Guodong} Wan, CJ ^{Wan, Changjin} Zhou, JM ^{Zhou, Jumei} Zhu, LQ ^{Zhu, Liqiang} Wan, Q ^{Wan, Qing}
Место работы автора

1. Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
Время подачи:2017-03-30 12:46:33

Краткое изложение: Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operatio

THIN-FILM TRANSISTORS FIELD-EFFECT TRANSISTORS PLASTICITY ELECTRONICS BIOELECTRONICS LOGIC

Категоризация： 材料科学 >> 纳米科学和纳米技术
Цитировать： ChinaXiv:201703.00988 (или эта версия ChinaXiv:201703.00988V1)
DOI:10.12074/201703.00988V1
CSTR:32003.36.ChinaXiv.201703.00988.V1
科创链TXID： 96e4dea1-2dcd-4445-b830-cf376fcb670c
Рекомендуемое цитирование： Wu, GD,Wan, CJ,Zhou, JM,Zhu, LQ,Wan, Q.Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates.null.[ChinaXiv:201703.00988V1] (Нажмите здесь, чтобы скопировать)

История версий

[V1]

2017-03-30 12:46:33

ChinaXiv:201703.00988V1

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