Transient Characteristics for Proton Gating in Laterally Coupled Indium-Zinc-Oxide Transistors postprint

Author: Liu, N ^{Liu, Ning} Zhu, LQ ^{Zhu, Li Qiang} Xiao, H ^{Xiao, Hui} Wan, CJ ^{Wan, Chang Jin} Liu, YH ^{Liu, Yang Hui} Chao, JY ^{Chao, Jin Yu}
Institute:

1. Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
Submit Time:2017-03-30 12:46:32

Abstract: The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processi

THIN-FILM?TRANSISTORS ?FIELD-EFFECT?TRANSISTORS ?SYNAPTIC PLASTICITY ?SUPERCONDUCTIVITY ?MECHANISMS ?INSULATOR

Subject: Materials Science >> Materials Science (General)
Cite as: ChinaXiv:201703.00970 (or this version ChinaXiv:201703.00970V1)
DOI:10.12074/201703.00970V1
CSTR:32003.36.ChinaXiv.201703.00970.V1
TXID： 4d4873eb-d61b-4a80-bc41-41f61bfa0a26
Recommended references： Liu, N,Zhu, LQ,Xiao, H,Wan, CJ,Liu, YH,Chao, JY.Transient Characteristics for Proton Gating in Laterally Coupled Indium-Zinc-Oxide Transistors.null.[ChinaXiv:201703.00970V1] (Click&Copy)

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2017-03-30 12:46:32

ChinaXiv:201703.00970V1

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